Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors

Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors

In this letter, we examine the potential of a functional device that can have good transistor and stress sensor properties. The device examined is based on the use of a thin oxide with high piezoelectric coefficients under the gate region. Channel charge and current are controlled by gate voltage or by stress. We examine the performance of two classes of heterostructures that are important semi...

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole mobility that can be further enhanced with the use of strain. We fabricate and study InxGa1 xSb-channel pMOSFETs with atomic layer deposition Al2O3 dielectric and self-aligned source/drain formed by ion implantation. The effects of strain and...

Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors

In this paper, electrical characteristics of nanoscale single-, double-, and all-around-gate silicon-0n-insulator (SOI) devices are computational investigated by using a quantum mechanical simulation. Considering several important properties, such as on/off current ratio, drain induced channel barrier height lowering, threshold voltage roll off, and subthreshold swing, geometry aspect ratio is ...

Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

Highly doped thin-channel GaN-metal–semiconductor field-effect transistors

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors ~MESFETs! grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5310 cm were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and max...